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Integrated Electro-optical Devices Based on K1-yNayTa1-xNbxO3 Thin Films

Aim: Development of low-switching-voltage integrated optical devices exploiting the large electro-optical coefficients of KNTN in the vincinity of the ferro- to para-electric phase transition. Approach: Growth of micometer-thin KNTN films on lattice matched KT substrates by the liquid phase epitaxy (LPE) method. Active electro-optic devices will be structured using the lithography and ion-sputtering techniques. Impact: Integrated optical switches and filters for telecommunication applications.

Integrated Electro-optical Devices
AFM picture of ion etched optical waveguides in K1-yNayTa1-xNbxO3 thin film on KTaO3 substrate.

People involved: Herzog, Guarino, Aravazhi, Poberaj

last change: 2006/05/10 by webmaster
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